FET Tests and Parameters

The following tests are available, depending on the type of power analyzer, DUT, test type, and instrument option that you use.

 

If you are using a B1505A power analyzer, you must also select a test type (IV, CV, or Gate Diode).

Ciss Test

Measures the device Input Capacitance. Requires the N1272A Device Capacitance Selector SMU.

Click here for more information.

Coss Test

Measures the device Output Capacitance. Requires the N1272A Device Capacitance Selector SMU.

Click here for more information.

Crss Test

Measures the device Reverse transfer capacitance. Requires the N1272A Device Capacitance Selector SMU.

Click here for more information.

Gate Diode Forward

Measures characteristics of gate current when source and drain are grounded. Some transistors (mainly GaN) have a diode structure between Gate and Source, and thus have large Gate-to-Source current flow. (One example type of DUT is a GIT or Gate Injection Transistor.)

NOTE: Use this measurement ONLY for Gate Injection Transistors (GIT).

Click here for more information.

Gate Diode Reverse

The same as the Gate Diode Forward test but uses negative voltages.

NOTE: Use this measurement ONLY for Gate Injection Transistors (GIT).

Click here for more information.

Id-Vds Test

Measures Drain current vs. Drain voltage characteristics (Id-Vds with multiple Vg steps) for MOSFET or GaN FET. SMU pulse is used for the Drain-Source voltage output.

Click here for more information.

Id-Vgs Test

Measures Drain current vs. Gate voltage characteristics. SMU pulse is used for the Drain-Source voltage output. (Available only if you choose the H21 Instrument option in the Hardware Configuration dialog.)

Click here for more information.

Id-Vgs Expander Test

Performs an Id-Vgs measurement by using UHCU, HVMCU and UHVU while the voltage drop at the output resistance of expanders is compensated to make Vds constant. (Available only if you choose the H51 or H71 Instrument option in the Hardware Configuration dialog.)

Click here for more information.

Diode If-Vf Test

Measures the forward bias voltage vs. current characteristics of the body (free-wheeling) diode. SMU voltage pulse is used for the forward bias output.

Click here for more information.

Diode Ir-Vr Test

Measures the reverse bias voltage vs. current characteristics of the body (free-wheeling) diode.

Click here for more information.

Rg, Cgg-Vg Test

Measures the internal gate resistance, Rg, of the device. The device must have a gate oxide. In IC-CAP and the PEMG software the gate resistance is calculated from the Cox, also known as Cgg or Cg. Cgg = Cgs + Cgd + Cgb. Requires the N1272A Device Capacitance Selector SMU.

Click here for more information.


Back to: Step 2. IV and CV Configure Tests and Test Settings

See also: IGBT Devices Tests and Parameters